RTP (Rapid Heat Treatment) tube furnace is widely used in semiconductor and other fields due to its fast heating rate. Some models can reach up to 50 ℃/s, such as PT-TRTP1000-S1 LK1W, which can be customized to meet the demand for rapid heat treatment in semiconductor, materials science and other fields.

The commonly used PT-TRTP1000-110LK1W fast annealing furnace (click on the image to view product details)

1. The core advantage of RTP tube furnace: fast heating rate
RTP tube furnace uses high-power halogen lamps or infrared lamps as heat sources, and directly acts on the surface of the sample through radiation heat transfer, achieving a heating rate of tens to tens of degrees Celsius per second.
This rapid heating capability greatly shortens the heat treatment time, for example:
The traditional tube furnace requires several hours to complete the annealing process, while the RTP tube furnace can be completed in seconds to minutes.
In the back-end process of CMOS devices, second level annealing can repair process damage, reduce oxide trap charge density by more than 90%, and greatly improve device reliability.

2. Technical characteristics of RTP tube furnace
Efficient heating system:
High power halogen lamps or infrared lamps are used as heat sources to directly heat the sample through radiative heat transfer, reducing thermal conduction losses.
Optimization of heating zone design (such as double-sided heating structure) to ensure temperature uniformity on the chip is better than ± 5 ℃, meeting high-precision process requirements.

Rapid cooling system:
By combining air or water cooling systems with a slide design, the sample can be cooled from high temperature (such as 1000 ℃) to room temperature within seconds to tens of seconds.

Good temperature control:
Equipped with high-sensitivity thermocouples and PID closed-loop control system, the temperature fluctuation range is ≤± 5 ℃, ensuring process reproducibility.
Support multi segment temperature curve programming (such as 30 segment temperature rise and fall programs) to adapt to different material and process requirements.

Uniform heating environment:
The tube furnace structure provides a uniform heating environment, reduces thermal stress and temperature gradients, and avoids inconsistent material properties.
For example, the temperature uniformity of the constant temperature zone of PT-TRTP1000-S1 1LK1W is ± 5 ℃, which meets the requirements of high-precision heat treatment.

Multi functional atmosphere control:
Support vacuum (such as 10 ⁻⁶ Torr) and multi-channel gas configuration (such as 1-5 customizable channels) to meet different material and process requirements.
For example, in the oxidation process, it is necessary to introduce O ₂ and select equipment equipped with a mass flow controller.

3. Typical application scenarios of RTP tube furnace
Semiconductor manufacturing:
Rapid annealing after ion implantation reduces impurity diffusion time and prevents lattice defects from diffusing into deeper layers.
Ohmic contact rapid alloy, silicide alloy annealing, oxide growth and other processes.

Materials Science Research:
Study the processes of material phase transition, stress release, oxidation/reduction reactions, etc.
Rapid heat treatment of nanomaterials and thin film materials effectively controls the microstructure and physical properties of the materials.

Solar cell manufacturing:
Adjust the crystal quality of silicon wafers, optimize optoelectronic performance, and improve the conversion efficiency of solar cells.
Rapid heat treatment processes such as selenium deposition in copper indium gallium selenide photovoltaic applications.

Laboratory small batch sample processing:
Save time and resources, suitable for quickly verifying material properties or process parameters.

Customized slide fast annealing furnace (click on the picture to view product details)

4. Suggestions for selection of RTP tube furnace
Select temperature range according to process requirements:
For example, SiC material processing requires the selection of equipment with a maximum temperature of ≥ 1100 ℃ and a heating rate of ≥ 50 ℃/s.

Select the cavity diameter and length based on the sample size:
To process 8-inch wafers, equipment with a cavity diameter of ≥ 200mm and an effective heating area of ≥ 180 × 180mm should be selected.

Confirm if the device supports vacuum and multi-channel gas configuration:
For example, the oxidation process requires the introduction of O ₂, and equipment equipped with a mass flow controller needs to be selected.

Prioritize devices with multi segment temperature curve programming capabilities:
Improve production efficiency and adapt to complex process requirements.Click to learn more customized tube furnaces! Or click on online customer service to learn more about product information!